INFLUENCE OF OXIDATION RATE AND HEAT TREATMENT ON DENSITY OF SURFACE STATES IN SI-SIO2 SYSTEM (MOS DEVICES - E/T)

被引：9

作者：

ZAININGER, KH

REVESZ, AG

机构：

来源：

关键词：

D O I：

10.1063/1.1754312

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：108 / +

页数：1

共 6 条

[1] LANDER JJ, 1963, ANN NY ACAD SCI, V101, P605
[2] ON THE LOGARITHMIC RATE LAW IN CHEMISORPTION AND OXIDATION
LANDSBERG, PT
[J]. JOURNAL OF CHEMICAL PHYSICS, 1955, 23 (06) : 1079 - 1087
[3] LEE RW, 1964, PHYS CHEM GLASSES-B, V5, P35
[4] FIELD EFFECT-CAPACITANCE ANALYSIS OF SURFACE STATES ON SILICON
LEHOVEC, K
SLOBODSKOY, A
SPRAGUE, JL
[J]. PHYSICA STATUS SOLIDI, 1963, 3 (03): : 447 - 464
[5] DEFECT STRUCTURE OF GROWN SILICON DIOXIDE FILMS
REVESZ, AG
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) : 97 - +
[6] ZAININGER KH, 1965, IEEE T ELECTR DEV, VED12