CDTE HOLE LIFETIME FROM THE PHOTOVOLTAIC EFFECT

[1] CARRIER MOBILITY AND SHALLOW IMPURITY STATES IN ZNSE AND ZNTE [J]. PHYSICAL REVIEW, 1963, 130 (01): : 81 - +

[2] CDTE SOLAR CELLS AND PHOTOVOLTAIC HETEROJUNCTIONS IN II-VI COMPOUNDS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (03) : 217 - 232

[3] CUSANO DA, UNPUB

[4] de Nobel D., 1959, PHILIPS RES REPORTS, V14, P361

[5] HILSUM C, 1960, P INT C SEMICONDUCTO, P962

[6] SHALLOW AND DEEP ACCEPTOR STATES IN CDTE [J]. PHYSICS LETTERS, 1963, 7 (01): : 18 - 20

[7] HIGH-PURITY CDTE BY SEALED-INGOT ZONE REFINING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (04) : 343 - 344

[8] DIELECTRIC CONSTANT BEHAVIOR NEAR BAND EDGES IN CDTE AND GE [J]. PHYSICAL REVIEW LETTERS, 1962, 8 (03) : 87 - &

[9] HOLE DRIFT MOBILITY AND LIFETIME IN CDS CRYSTALS [J]. PHYSICAL REVIEW LETTERS, 1962, 8 (08) : 314 - &

[10] THE POTENTIALITIES OF SILICON AND GALLIUM ARSENIDE SOLAR BATTERIES [J]. SOLID-STATE ELECTRONICS, 1961, 2 (04) : 222 - 231

[1] CARRIER MOBILITY AND SHALLOW IMPURITY STATES IN ZNSE AND ZNTE [J]. PHYSICAL REVIEW, 1963, 130 (01): : 81 - +

[2] CDTE SOLAR CELLS AND PHOTOVOLTAIC HETEROJUNCTIONS IN II-VI COMPOUNDS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (03) : 217 - 232

[3] CUSANO DA, UNPUB

[4] de Nobel D., 1959, PHILIPS RES REPORTS, V14, P361

[5] HILSUM C, 1960, P INT C SEMICONDUCTO, P962

[6] SHALLOW AND DEEP ACCEPTOR STATES IN CDTE [J]. PHYSICS LETTERS, 1963, 7 (01): : 18 - 20

[7] HIGH-PURITY CDTE BY SEALED-INGOT ZONE REFINING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (04) : 343 - 344

[8] DIELECTRIC CONSTANT BEHAVIOR NEAR BAND EDGES IN CDTE AND GE [J]. PHYSICAL REVIEW LETTERS, 1962, 8 (03) : 87 - &

[9] HOLE DRIFT MOBILITY AND LIFETIME IN CDS CRYSTALS [J]. PHYSICAL REVIEW LETTERS, 1962, 8 (08) : 314 - &

[10] THE POTENTIALITIES OF SILICON AND GALLIUM ARSENIDE SOLAR BATTERIES [J]. SOLID-STATE ELECTRONICS, 1961, 2 (04) : 222 - 231