DETECTIVITY LIMITS FOR DIFFUSED JUNCTION PBSNTE DETECTORS

被引：42

作者：

JOHNSON, MR ^{[1
]}

CHAPMAN, RA ^{[1
]}

WROBEL, JS ^{[1
]}

机构：

[1] TEXAS INSTR INC,DALLAS,TX 75222

来源：

INFRARED PHYSICS | 1975年 / 15卷 / 04期

关键词：

D O I：

10.1016/0020-0891(75)90050-0

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：317 / 329

页数：13

共 9 条

[1] BATE RT, UNPUBLISHED DATA
[2] Hall R. N., 1959, P IEEE, V106, P923, DOI [DOI 10.1049/PI-B-2.1959.0171, 10.1049/pi-b-2.1959.0171]
[3] JOHNSON MH, UNPUBLISHED DATA
[4] CURVATURE COEFFICIENT OF GERMANIUM TUNNEL AND BACKWARD DIODES
KARLOVSKY, J
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (11) : 1109 - +
[5] MOLL JL, 1964, PHYSICS SEMICONDUCTO, P123
[6] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS
SAH, CT
NOYCE, RN
SHOCKLEY, W
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243
[7] SZE SM, 1969, PHYSICS SEMICONDUCTO, P90
[8] SZE SM, 1969, PHYSICS SEMICONDUCTO, P92
[9] WASHWELL ER, 1969, 7TH P INT C PHYS SEM, P11