MULTIATOMIC STEP FORMATION MECHANISM OF METALORGANIC VAPOR-PHASE EPITAXIAL GROWN GAAS VICINAL SURFACES AND ITS APPLICATION TO QUANTUM-WELL WIRES

被引：26

作者：

FUKUI, T ^{[1
]}

ISHIZAKI, J ^{[1
]}

HARA, S ^{[1
]}

MOTOHISA, J ^{[1
]}

HASEGAWA, H ^{[1
]}

机构：

[1] HOKKAIDO UNIV, DEPT ELECT ENGN, KITA KU, SAPPORO, HOKKAIDO 060, JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 146卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)00579-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The multiatomic steps formed on GaAs vicinal surfaces by metalorganic vapor phase epitaxy (MOVPE) are by atomic force microscopy (AFM). An AFM image of an epitaxially grown GaAs surface showed coherent multiatomic steps with extremely straight edges over a wide area. The average height and spacing of the multiatomic steps are 1.2-8 and 30-110 nm, respectively. These terrace widths change with the growth conditions. Narrower terrace widths are obtained at higher growth rates, and under higher AsH3 partial pressures and higher impurity doping conditions. The results suggest that the migration distance of a Ga atom on the terrace and the sticking coefficient at the step sites depend on these growth conditions. Using multiatomic steps, GaAs/AlGaAs quantum well wires (QWWs) were grown on a GaAs vicinal surface. Cross-sectional transmission electron microscopy and photoluminescence show the successful fabrication of QWWs.

引用

页码：183 / 187

页数：5

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