HIGH-PERFORMANCE INGAASP/INP STRAINED-LAYER MQW LASERS WITH REVERSED-MESA RIDGE-WAVE-GUIDE STRUCTURES

被引:10
作者
AOKI, M
KOMORI, M
TSUCHIYA, T
SATO, H
UOMI, K
OHTOSHI, T
机构
[1] Central Research Laboratory, Hitachi Ltd., Kokubunji
关键词
INDIUM PHOSPHINE; SEMICONDUCTOR JUNCTION LASERS;
D O I
10.1049/el:19950656
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Compressively-strained InCaAsP/InP MQW lasers with a simple reversed-mesa ridge-waveguide structure attain 300mW output and high temperature lasing operation up to 165 degrees C.
引用
收藏
页码:973 / 975
页数:3
相关论文
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