INFLUENCE OF EXCESS CARRIERS ON THE STAEBLER AND WRONSKI EFFECT OF A-SI SOLAR-CELLS

被引：27

作者：

NAKAMURA, N

WATANABE, K

NISHIKUNI, M

HISHIKAWA, Y

TSUDA, S

NISHIWAKI, H

OHNISHI, M

KUWANO, Y

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90368-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1139 / 1142

页数：4

共 7 条

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[3] PREPARATION AND PROPERTIES OF AMORPHOUS-SILICON PRODUCED BY A CONSECUTIVE, SEPARATED REACTION CHAMBER METHOD [J].

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[4] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI [J].

STAEBLER, DL ;

WRONSKI, CR .

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[5]

STEABLER DL, 1981, APPL PHYS LETT, V39, P733

[6] STATES IN GAP IN GLASSY SEMICONDUCTORS [J].

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MOTT, NF .

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[7] LIGHT-INDUCED INSTABILITY OF AMORPHOUS-SILICON PHOTO-VOLTAIC CELLS [J].

TSUDA, S ;

NAKAMURA, N ;

WATANABE, K ;

TAKAHAMA, T ;

NISHIWAKI, H ;

OHNISHI, M ;

KUWANO, Y .

SOLAR CELLS, 1983, 9 (1-2) :25-36

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