METAL-INSULATOR-TRANSITION IN A DOPED SEMICONDUCTOR

被引：265

作者：

ROSENBAUM, TF

MILLIGAN, RF

PAALANEN, MA

THOMAS, GA

BHATT, RN

LIN, W

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

[2] BELL TEL LABS INC,ALLENTOWN,PA 18104

来源：

PHYSICAL REVIEW B | 1983年 / 27卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.27.7509

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7509 / 7523

页数：15

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