2ND HYPERPOLARIZABILITY OF ONE-DIMENSIONAL SEMICONDUCTORS

被引：6

作者：

GALLAGHER, FB

SPANO, FC

机构：

[1] Department of Chemistry, Temple University, Philadelphia

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.50.5370

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The static second hyperpolarizability gamma(N) is calculated for one-dimensional semiconductors consisting of N-coupled two-level systems. Coulomb interactions are treated exactly in the complete basis set of zero, one, and two electron-hole (e-h) pairs. Analytical solutions for the per-site response gamma(N)/N are obtained in the polymer limit for both the strong- and weak-localization (free-particle) regimes. The double e-h pair states play a crucial role in determining the sign and magnitude of gamma(N) near the strong-localization limit and prevent unphysical divergences in the per-site response as N increases. Applications to generic polysilanes are discussed.

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页码：5370 / 5381

页数：12

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