POSITRON EFFECTIVE-MASS IN SILICON

被引：17

作者：

PANDA, BK

SHAN, YY

FUNG, S

BELING, CD

机构：

[1] Department of Physics, University of Hong Kong, Hong Kong

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.52.5690

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The positron effective mass in Si is obtained from the first-principles calculations along various crystallographic directions. The effect of electron-positron correlation on the band mass is examined in this work. A positron pseudopotential scheme is worked out to calculate the isotropic band mass without explicitly solving the band energy. The effective mass 1.46m obtained as a sum of band mass and the positron-plasmon interaction compares very well with 1.5m obtained from the positron mobility data.

引用

页码：5690 / 5694

页数：5

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