DYNAMICS OF CARRIER HEATING AND SWEEPOUT IN WAVE-GUIDE SATURABLE ABSORBERS

被引：20

作者：

USKOV, AV

KARIN, JR

NAGARAJAN, R

BOWERS, JE

机构：

[1] UNIV CALIF LOS ANGELES,DEPT ELECT ENGN,LOS ANGELES,CA 90024

[2] SDL INC,SAN JOSE,CA 95134

[3] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1995年 / 1卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/2944.401241

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pump-probe measurements in reverse-biased GaAs-GaAlAs waveguide saturable absorbers used in mode-locked diode lasers reveal an ultrafast transient in the absorption recovery dynamics, and a second slower signal before the final recovery, Zn this paper, we present a numerical model of the absorption and carrier dynamics in these saturable absorbers. The model includes high-field and space-charge effects, in addition to the spectral hole burning and carrier heating typically considered in semiconductor laser amplifiers. The results of the model indicate that field-induced carrier heating strongly influences the absorption dynamics in saturable absorbers. Screening of the electric field by drifting photogenerated charges affects the sweepout of carriers from the absorbing region, and thus, influences the absorption dynamics as well.

引用

收藏

页码：552 / 561

页数：10

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