INTERFACIAL CAPACITANCE

被引：8

作者：

KRUPSKI, J

机构：

[1] Institute of Theoretical Physics, Warsaw University

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1990年 / 157卷 / 01期

关键词：

D O I：

10.1002/pssb.2221570119

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An analysis is made of experimental results on the capacitance of thin‐film condensers. To find the screened electrostatic potential in a three layer structure a specular electron reflection model is employed which takes into account quantum effects. The resulting interfacial capacitance is in semiquantitative agreement with the measured value for the thin‐film Al–Al2O3–Al condenser. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA

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页码：199 / 207

页数：9

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