GAAS/ALAS QUANTUM-WELLS FOR ELECTROABSORPTION MODULATORS

被引：26

作者：

PEZESHKI, B

LORD, SM

BOYKIN, TB

HARRIS, JS

机构：

[1] Solid State Laboratories, Stanford University, Stanford

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 22期

关键词：

D O I：

10.1063/1.106874

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate both theoretically and experimentally that the quantum-confined Stark effect leads to larger absorption changes in GaAs/AlAs quantum wells compared to the more conventional GaAs/AlGaAs system due to the higher GAMMA-confinement. The lower indirect valleys in AlAs do not degrade the performance and the exciton resonance is maintained at higher-energy shifts. The improvement in exciton oscillator strength is nearly 50% with a 70-meV shift. The greater exciton strength at high fields has important applications for optical modulators and switches that operate at the long-wavelength side of the zero-bias exciton.

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页码：2779 / 2781

页数：3

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