Atomic structures at the buried Pb/Si(111) interface

被引:13
作者
Lucas, CA
Loretto, D
机构
[1] Materials Sciences Division, Lawrence Berkeley Laboratory, University of California, Berkeley
关键词
lead; metal-semiconductor interfaces; silicon; single crystal epitaxy; surface relaxation and reconstruction; x-ray scattering; diffraction; and reflection;
D O I
10.1016/0039-6028(95)01010-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Using surface X-ray scattering and crystal truncation rod (CTR) analysis we have studied the buried atomic structure at the Pb/Si(111) interface. In agreement with previous studies, we observe that the (7 X 7) reconstruction is preserved at the interface, containing many features of the Si surface reconstruction and decorated with Pb atoms adsorbed at on-top sites. The (7 X 7) reconstruction undergoes an irreversible transition to a (1 X 1) structure between 150 degrees C and 300 degrees C. Changes in the first-order CTR indicate that the transition from the bulk Si lattice to the ''bulk-like'' Pb lattice occurs over a single Pb monolayer at the interface.
引用
收藏
页码:L1219 / L1225
页数:7
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