HIGH-FIELD TRANSPORT WITH HOT PHONONS IN DEGENERATE SEMICONDUCTORS

被引:15
作者
GUPTA, R
RIDLEY, BK
机构
关键词
D O I
10.1016/0038-1101(89)90221-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1241 / 1245
页数:5
相关论文
共 24 条
[1]  
[Anonymous], 1988, QUANTUM PROCESSES SE
[2]   NONEQUILIBRIUM ELECTRON-PHONON SCATTERING IN SEMICONDUCTOR HETEROJUNCTIONS [J].
CAI, W ;
MARCHETTI, MC ;
LAX, M .
PHYSICAL REVIEW B, 1986, 34 (12) :8573-8580
[3]   GENERATION OF NONEQUILIBRIUM OPTICAL PHONONS IN GAAS AND THEIR APPLICATION IN STUDYING INTERVALLEY ELECTRON-PHONON SCATTERING [J].
COLLINS, CL ;
YU, PY .
PHYSICAL REVIEW B, 1984, 30 (08) :4501-4515
[4]   HOT-ELECTRON RELAXATION IN GAAS QUANTUM WELLS [J].
DASSARMA, S ;
JAIN, JK ;
JALABERT, R .
PHYSICAL REVIEW B, 1988, 37 (03) :1228-1230
[5]  
KOCEVAR P, 1973, ACTA PHYS AUSTRIACA, V37, P259
[6]   NON-OHMIC TRANSPORT AND PHONON AMPLIFICATION IN POLAR SEMICONDUCTORS [J].
KOCEVAR, P .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (23) :3349-+
[7]   NONEQUILIBRIUM PHONON EFFECTS ON HOT CARRIER TRANSPORT AND THERMAL NOISE IN SEMICONDUCTOR HETEROSTRUCTURES [J].
LEI, XL ;
HORING, NJM .
SOLID-STATE ELECTRONICS, 1988, 31 (3-4) :531-534
[8]   HOT CARRIER COOLING IN GAAS QUANTUM WELLS [J].
LEO, K ;
RUHLE, WW ;
QUEISSER, HJ ;
PLOOG, K .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 45 (01) :35-39
[9]  
LOBANTZER H, 1987, PHYS REV B, V36, P1136
[10]  
LOBANTZER H, 1987, APPL PHYS LETT, V51, P673