CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE

被引：27

作者：

GEBHARDT, JJ

TANZILLI, RA

HARRIS, TA

机构：

[1] DIV SPACE,SPACE SCI LAB,PHILADELPHIA,PA 19101

[2] GE,DIV RE ENTRY & ENVIRONM SYST,PHILADELPHIA,PA 19101

来源：

关键词：

D O I：

10.1149/1.2132642

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1578 / 1582

页数：5

共 10 条

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[4] BILLY M, 1959, ANN CHIM PARIS, V4, P795
[5] PYROLYTIC SI3N4
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KUNTZ, U
CROFT, WJ
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1972, 55 (08) : 431 - &
[6] GEBHARDT JJ, 1973, 4TH INT C CHEM VAP D, P460
[7] SYNTHESIS, CHARACTERIZATION, AND CONSOLIDATION OF SI3N4 OBTAINED FROM AMMONOLYSIS OF SICL4
MAZDIYASNI, KS
COOKE, CM
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1973, 56 (12) : 628 - 633
[8] OXYGEN CONTENT OF ALPHA SILICON-NITRIDE
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BURNS, FC
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SKAAR, EC
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1973, 56 (07) : 395 - 395
[9] ROSOLOWSKI JH, 1974, ARPA2698 ADV RES PRO
[10] Wild S., 1992, SPEC CERAM, V5, P385