ELIMINATION AND GENERATION OF SI-SIO2 INTERFACE TRAPS BY LOW-TEMPERATURE HYDROGEN ANNEALING

被引：118

作者：

THANH, LD ^{[1
]}

BALK, P ^{[1
]}

机构：

[1] AACHEN TECH UNIV,INST SEMICOND ELECTR,D-5100 AACHEN,FED REP GER

来源：

关键词：

D O I：

10.1149/1.2096133

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1797 / 1801

页数：5

共 32 条

[1] Aslam M., 1983, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 83, P103
[2] ASLAM M, 1984, SOLID STATE ELECTRON, V27, P709
[3] ASLAM M, 1984, PHYS STATUS SOLIDI A, V24, P659
[4] BALK P, 1965, MAY EL SOC M SAN FRA
[5] BALK P, 1965, OCT EL SOC M BUFF
[6] BROWN DB, 1985, IEEE T NUCL SCI, V32, P3900
[7] LOW-TEMPERATURE REDUCTION OF FAST SURFACE STATES ASSOCIATED WITH THERMALLY OXIDIZED SILICON
CASTRO, PL
DEAL, BE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 280 - +
[8] CHARACTERISTICS OF FAST SURFACE STATES ASSOCIATED WITH SIO2-SI AND SI3N4-SIO2-SI STRUCTURES
DEAL, BE
MACKENNA, EL
CASTRO, PL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) : 997 - &
[9] THE EFFECTS OF WATER ON OXIDE AND INTERFACE TRAPPED CHARGE GENERATION IN THERMAL SIO2-FILMS
FEIGL, FJ
YOUNG, DR
DIMARIA, DJ
LAI, S
CALISE, J
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5665 - 5682
[10] HYDROGEN MIGRATION UNDER AVALANCHE INJECTION OF ELECTRONS IN SI METAL-OXIDE-SEMICONDUCTOR CAPACITORS
GALE, R
FEIGL, FJ
MAGEE, CW
YOUNG, DR
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6938 - 6942