SOME OBSERVATIONS ON CHARGE BUILDUP AND RELEASE IN SILICON DIOXIDE IRRADIATED WITH LOW ENERGY ELECTRONS

被引：17

作者：

SIMONS, M

MONTEITH, LK

HAUSER, JR

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1968.16547

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：966 / +

页数：1

共 8 条

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GOOD, RH
[J]. PHYSICAL REVIEW, 1956, 102 (06): : 1464 - 1473
[5] SCHUMACHER BW, 1962 P EL COMP C, P152
[6] EFFECTS OF IONIZING RADIATION ON OXIDIZED SILICON SURFACES AND PLANAR DEVICES
SNOW, EH
GROVE, AS
FITZGERALD, DJ
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (07): : 1168 - +
[7] STANLEY AG, 1967, 2 SEM INT SPEC C LAS
[8] ZAININGER KH, 1967, RCA REV, V28, P208