CW OPERATION OF AN ALGALNP DOUBLE HETEROSTRUCTURE LASER DIODE AT 77-K GROWN BY ATMOSPHERIC METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：22

作者：

IKEDA, M

MORI, Y

TAKIGUCHI, M

KANEKO, K

WATANABE, N

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 06期

关键词：

D O I：

10.1063/1.95363

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：661 / 663

页数：3

相关论文

共 4 条

[1] MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAIP VISIBLE LASER-DIODES OPERATING AT 0.66-0.68 MU-M AT ROOM TEMPERATURES
ASAHI, H
KAWAMURA, Y
NAGAI, H
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6958 - 6964
[2] CASEY HC, 1978, HETEROSTRUCTURE LA B, P45
[3] Duchemin J.-P., 1979, INST PHYS CONF SE, V45, P10
[4] ROOM-TEMPERATURE PULSED OPERATION OF ALGALNP GALNP ALGALNP DOUBLE HETEROSTRUCTURE VISIBLE-LIGHT LASER-DIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
HINO, I
GOMYO, A
KOBAYASHI, K
SUZUKI, T
NISHIDA, K
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (11) : 987 - 989