DEPOSITION OF TANTALUM NITRIDE THIN-FILMS FROM ETHYLIMIDOTANTALUM COMPLEX

被引：47

作者：

CHIU, HT

CHANG, WP

机构：

[1] Department of Applied Chemistry, National Chiao Tung University, Hsinchu

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1992年 / 11卷 / 02期

关键词：

D O I：

10.1007/BF00724610

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：96 / 98

页数：3

共 10 条

[1]

BANASZAK MM, 1990, INORG CHEM, V29, P1518

[2] LADDER STRUCTURE OF [(TBUCH2)2TAN]5.NH3.2C7H8 AND ITS RELATIONSHIP TO CUBIC TAN [J].

HOLL, MMB ;

WOLCZANSKI, PT ;

VANDUYNE, GD .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1990, 112 (22) :7989-7994

[3] ARTIFACTS OBSERVED DURING AUGER PROFILING OF TA, TI, AND W METALS, NITRIDES AND OXYNITRIDES [J].

INGREY, S ;

JOHNSON, MB ;

STREATER, RW ;

SPROULE, GI .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (04) :968-970

[4]

STRINGFELLOW GB, 1989, ORGANOMETALLIC VAPOR, P262

[5] LOW-TEMPERATURE DEPOSITION OF METAL NITRIDES BY THERMAL-DECOMPOSITION OF ORGANOMETALLIC COMPOUNDS [J].

SUGIYAMA, K ;

PAC, S ;

TAKAHASHI, Y ;

MOTOJIMA, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (11) :1545-1549

[6] TANTALUM-CARBON BOND FORMATION IN THERMAL-DECOMPOSITION OF TANTALUM DIETHYLAMIDE [J].

TAKAHASHI, Y ;

ONOYAMA, N ;

ISHIKAWA, Y ;

MOTOJIMA, S ;

SUGIYAMA, K .

CHEMISTRY LETTERS, 1978, (05) :525-528

[7] TIN AND TAN AS DIFFUSION-BARRIERS IN METALLIZATIONS TO SILICON SEMICONDUCTOR-DEVICES [J].

WITTMER, M .

APPLIED PHYSICS LETTERS, 1980, 36 (06) :456-458

[8]

WITTMER M, 1980, APPL PHYS LETT, V36, P540

[9]

1982, JCPDS191291 JOINT CO

[10]

1982, JCPDS321283 JOINT CO

← 1 →