HIGH PERMEABILITY OF IRON-NITRIDE FILMS PREPARED BY ION-BEAM DEPOSITION USING NH3

被引：7

作者：

NAKAGAWA, S

HAMAGUCHI, T

NAOE, M

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1992年 / 112卷 / 1-3期

关键词：

D O I：

10.1016/0304-8853(92)91211-B

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Fe-N thin films were deposited by using a Facing Targets type of Ion Source (FTIS). NH3 seemed to be more suitable than N2 ad reactive gas to prepare Fe-N films with larger 4piM(s) and higher permeability mu(r). The films deposited at P(NH3), of 0.04 mTorr exhibited mu(r) as high as about 3000 after post-annealing at 150-degrees-C.

引用

页码：392 / 394

页数：3