CHARGE-TRANSPORT IN POLY(3-METHYLTHIOPHENE) SCHOTTKY-BARRIER DIODES

被引：3

作者：

GOMES, HL

TAYLOR, DM

UNDERHILL, AE

机构：

[1] Institute of Molecular and Biomolecular Electronics, University of Wales, Bangor, Gwynedd LL57 1UT, Dean Street

来源：

SYNTHETIC METALS | 1993年 / 57卷 / 01期

关键词：

D O I：

10.1016/0379-6779(93)90560-J

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Schottky-barrier devices were formed from electropolymerised films of poly (3-methylthiophene) (PMeT). Thermal annealing of a partially undoped film led to diodes with rectification ratios as high as 5900 at 1 V and 50,000 at 2.5 V and ideality factors slightly above 2. The temperature dependence of ac loss tangent and forward currents are identical suggesting that bulk effects dominate device behaviour even at very low forward voltages. Below 250 K forward currents are essentially independent of temperature. Preliminary TSC measurements show the presence of at least two trapping levels in the devices.

引用

页码：4076 / 4081

页数：6

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