LOCALIZED STATES OF P-TYPE INVERSION LAYERS IN SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：4

作者：

GARCIA, N ^{[1
]}

FALICOV, LM ^{[1
]}

机构：

[1] UNIV CALIF,DEPT PHYS,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW B | 1975年 / 11卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.11.728

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：728 / 731

页数：4

共 16 条

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[8]

GARCIA N, UNPUBLISHED

[9] RESONANCE SPECTROSCOPY OF ELECTRONIC LEVELS IN A SURFACE ACCUMULATION LAYER [J].

KAMGAR, A ;

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[10]

KITTEL C, 1971, INTRO SOLID STATE PH, P384

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