DYNAMIC CHARACTERISTICS OF HIGH-SPEED P-SUBSTRATE GAINASP BURIED CRESCENT LASERS

被引:4
作者
NG, WW
CRAIG, R
YEN, HW
机构
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D O I
10.1109/50.16894
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:560 / 567
页数:8
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共 11 条
[1]  
AGGRAWAL GP, LONG WAVELENGTH SEMI, pCH5
[2]   HIGH-SPEED INGAASP CONSTRICTED-MESA LASERS [J].
BOWERS, JE ;
HEMENWAY, BR ;
GNAUCK, AH ;
WILT, DP .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (06) :833-844
[3]  
KAMITE K, 1986, ELECTRON LETT, V22, P407, DOI 10.1049/el:19860278
[4]   NEW FABRICATION METHOD FOR 1.3-MU-M GAINASP-INP BURIED CRESCENT LASERS USING A REACTIVE ION-BEAM ETCHING TECHNIQUE [J].
KASUKAWA, A ;
IWASE, M ;
HIRATANI, Y ;
MATSUMOTO, N ;
IKEGAMI, Y ;
IRIKAWA, M ;
KASHIWA, S .
APPLIED PHYSICS LETTERS, 1987, 51 (22) :1774-1776
[5]   HIGH-POWER HIGH-RELIABILITY OPERATION OF 1.3-MU-M P-SUBSTRATE BURIED CRESCENT LASER-DIODES [J].
NAKAJIMA, Y ;
HIGUCHI, H ;
KOKUBO, Y ;
SAKAKIBARA, Y ;
KAKIMOTO, S ;
NAMIZAKI, H .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1987, 5 (09) :1263-1268
[6]   11.5GHZ MODULATION BANDWIDTH PARA-SUBSTRATE GAINASP BURIED CRESCENT LASER WITH HIGH OUTPUT POWER [J].
NG, W ;
CRAIG, R ;
YEN, HW .
ELECTRONICS LETTERS, 1988, 24 (01) :43-45
[7]  
NG W, 1985, P INT C LASERS 85, P588
[8]   AN ANALYTIC MODEL FOR THE MODULATION RESPONSE OF BURIED HETEROSTRUCTURE LASERS [J].
NG, WW ;
SOVERO, EA .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (09) :1008-1015
[9]   FREQUENCY-RESPONSE OF 1.3-MU-M INGAASP HIGH-SPEED SEMICONDUCTOR-LASERS [J].
OLSHANSKY, R ;
HILL, P ;
LANZISERA, V ;
POWAZINIK, W .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (09) :1410-1418
[10]   HIGH-POWER OUTPUT OVER 200 MW OF 1.3 MU-M GAINASP VIPS LASERS [J].
OSHIBA, S ;
MATOBA, A ;
KAWAHARA, M ;
KAWAI, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) :738-743