THE EFFECT OF SUBSTRATE GROWTH AREA ON MISFIT AND THREADING DISLOCATION DENSITIES IN MISMATCHED HETEROSTRUCTURES

被引:119
作者
FITZGERALD, EA
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 04期
关键词
D O I
10.1116/1.584600
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:782 / 788
页数:7
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共 29 条
  • [1] LIKE-SIGN ASYMMETRIC DISLOCATIONS IN ZINC-BLENDE STRUCTURE
    ABRAHAMS, MS
    BLANC, J
    BUIOCCHI, CJ
    [J]. APPLIED PHYSICS LETTERS, 1972, 21 (05) : 185 - &
  • [2] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX
    ABRAHAMS, MS
    WEISBERG, LR
    BUIOCCHI, CJ
    BLANC, J
    [J]. JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) : 223 - &
  • [3] INFLUENCE OF LATTICE MISFIT ON HETEROJUNCTION BIPOLAR-TRANSISTORS WITH LATTICE-MISMATCHED INGAAS BASES
    ASHIZAWA, Y
    AKBAR, S
    SCHAFF, WJ
    EASTMAN, LF
    FITZGERALD, EA
    AST, DG
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (08) : 4065 - 4074
  • [4] GROWTH OF INP ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    CRUMBAKER, TE
    LEE, HY
    HAFICH, MJ
    ROBINSON, GY
    [J]. APPLIED PHYSICS LETTERS, 1989, 54 (02) : 140 - 142
  • [5] NEW SOURCE OF DISLOCATIONS IN GEXSI1-X/SI(100) STRAINED EPITAXIAL LAYERS
    EAGLESHAM, DJ
    MAHER, DM
    KVAM, EP
    BEAN, JC
    HUMPHREYS, CJ
    [J]. PHYSICAL REVIEW LETTERS, 1989, 62 (02) : 187 - 190
  • [6] STRUCTURE AND RECOMBINATION IN INGAAS/GAAS HETEROSTRUCTURES
    FITZGERALD, EA
    AST, DG
    KIRCHNER, PD
    PETTIT, GD
    WOODALL, JM
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) : 693 - 703
  • [7] ELIMINATION OF INTERFACE DEFECTS IN MISMATCHED EPILAYERS BY A REDUCTION IN GROWTH AREA
    FITZGERALD, EA
    KIRCHNER, PD
    PROANO, R
    PETTIT, GD
    WOODALL, JM
    AST, DG
    [J]. APPLIED PHYSICS LETTERS, 1988, 52 (18) : 1496 - 1498
  • [8] FITZGERALD EA, IN PRESS J APPL PHYS
  • [9] FITZGERALD EA, 1989, THESIS CORNELL U
  • [10] FITZGERALD EA, 1988, DISLOCATIONS INTERFA, P173