SPATIAL-DISTRIBUTION OF 0.68-EV EMISSION FROM UNDOPED SEMI-INSULATING GALLIUM-ARSENIDE REVEALED BY HIGH-RESOLUTION LUMINESCENCE IMAGING

被引：28

作者：

WARWICK, CA

BROWN, GT

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 06期

关键词：

D O I：

10.1063/1.95544

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：574 / 576

页数：3

共 12 条

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[8] INHOMOGENEOUS GAAS-FET THRESHOLD VOLTAGES RELATED TO DISLOCATION DISTRIBUTION [J].

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[9]

Skolnick M. S., 1984, Semi-Insulating III-V materials, P446

[10] INHOMOGENEITY OF THE DEEP CENTER EL2 IN GAAS OBSERVED BY DIRECT INFRARED IMAGING [J].

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WARE, RM .

JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (01) :107-125

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