2-PHOTON SPECTROSCOPY IN THE LOW-PRESSURE AND HIGH-PRESSURE PHASES OF AGGAS2

被引：12

作者：

REIMANN, K

RUBENACKE, S

STEUBE, M

机构：

[1] Institut für Physik, Universität Dortmund

来源：

SOLID STATE COMMUNICATIONS | 1995年 / 96卷 / 05期

关键词：

SEMICONDUCTORS; ELECTRONIC BAND STRUCTURE; PHASE TRANSITIONS; NONLINEAR OPTICS; STRAIN; HIGH PRESSURE;

D O I：

10.1016/0038-1098(95)00437-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Two-photon measurements were performed in AgGaS2 under hydrostatic pressures up to 8 GPa. In both the low-pressure phase (chalcopyrite structure) and the high-pressure phase (above 3.8 GPa, unknown structure), the pressure dependences of the band gap and of the exciton binding energy were determined. Additionally, in the chalcopyrite phase the exchange energy was measured as a function of pressure.

引用

页码：279 / 283

页数：5

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