FIELD ELECTRON-EMISSION PROPERTIES OF TIC SINGLE-CRYSTALS

被引：15

作者：

FUJII, K

ZAIMA, S

SHIBATA, Y

ADACHI, H

OTANI, S

机构：

[1] MURORAN INST TECHNOL,DEPT APPL MAT SCI,27-1 MIZUMOTO,MURORAN,HOKKAIDO 050,JAPAN

[2] TOHOKU UNIV,DEPT ELECTR ENGN,SENDAI,MIYAGI 980,JAPAN

[3] NATL INST RES INORGAN MAT,SAKURA,IBARAKI 305,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 05期

关键词：

D O I：

10.1063/1.334444

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1723 / 1728

页数：6

共 7 条

[1] STABLE CARBIDE FIELD EMITTER [J].

ADACHI, H ;

FUJII, K ;

ZAIMA, S ;

SHIBATA, Y ;

OSHIMA, C ;

OTANI, S ;

ISHIZAWA, Y .

APPLIED PHYSICS LETTERS, 1983, 43 (07) :702-703

[2]

Dyke W P, 1956, ADV ELECT ELECTRON P, V8, P89

[3]

Oshima C., 1984, Oyo Buturi, V53, P206

[4] PREPARATION OF TICX SINGLE-CRYSTALS WITH MAXIMUM CARBON CONTENT BY A FLOATING ZONE TECHNIQUE [J].

OTANI, S ;

HONMA, S ;

TANAKA, T ;

ISHIZAWA, Y .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (01) :1-7

[5] ROLE OF ION-BOMBARDMENT IN FIELD-EMISSION CURRENT INSTABILITY [J].

TODOKORO, H ;

SAITOU, N ;

YAMAMOTO, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (10) :1513-1516

[6]

VANOOSTROM AGJ, 1966, PHILIPS RES REP S, V1, P1

[7]

ZAIMA S, 1981, 28TH FIELD EM S OR, P156

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