Soft magnetic properties of Fe-M-O (M=Hf, Zr, Y, Ce) films with high electrical resistivity

Structure, magnetic properties and electrical resistivity (rho) of Fe-M-O (M = I-If Zr, Y, Ce) prepared by r,f: reactive sputtering technique in an Ar + O-2 atmosphere were investigated. I,? an as-deposited slate, the structure of the Fe-M-O films in the compositional range of 8 < O < 35 at.% and 5-7 < M < 25 at.% is found to be composed of nanoscale grains and amorphous phase containing large amounts of M and O. In the course of the annealing, which temperature is below the crystalization temperature, the bcc grains slightly grow and the T-c of the amorphous phase rises with increasing O conte,lt in the amorphous phase mainly due to discharge of O from the bcc to the amorphous phase. mu'(100MHz) of 1000, H-c of 41A/m, rho of 6.4 mu Omega m and mu'(100MHz) of 700, H-c of 290A/m, rho of 6.3 mu Omega m were obtained for Fe68Y22O10 and Fe61Hf13O25 films annealed at 773K and 673K for 10.8ks under uniaxial field, respectively.