PHOTOLUMINESCENCE STUDY OF ZNO VARISTOR STABILITY

被引:68
作者
RAMANACHALAM, MS
ROHATGI, A
CARTER, WB
SCHAFFER, JP
GUPTA, TK
机构
[1] LAFAYETTE COLL,DEPT CHEM ENGN,EASTON,PA 18042
[2] ALCOA TECH CTR,ALCOA CTR,PA 15609
关键词
PHOTOLUMINESCENCE (PL); VARISTOR; ZNO;
D O I
10.1007/BF02659707
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Photoluminescence (PL) measurements were carried out on commercial ZnO varistor samples that were electrically stressed and/or annealed at different temperatures. Changes in the intensity of green and yellow luminescence centers were studied as a function of annealing treatment. It was found that the ZnO luminescence (green and yellow) decrease with increase in annealing temperature, reach a minimum at 700 degrees C, and increase again beyond 800 degrees C. Furthermore, these green and yellow luminescence bands observed in the PL spectra are quenched in the ZnO varistor samples, compared to pure ZnO. In an electrically stressed ZnO varistor sample, the luminescence intensity was found to be higher compared to the as-sintered varistor sample. Annealing of the stressed varistor sample resulted in a decrease of the luminescence intensity. These PL observations are consistent with previous deep level transient spectroscopy and doppler positron annihilation spectroscopy results. All of the experimental results are consistent with the ion migration model of degradation and can be explained using a grain boundary defect model.
引用
收藏
页码:413 / 419
页数:7
相关论文
共 25 条
[1]   SURFACE EFFECTS ON LOW-ENERGY CATHODOLUMINESCENCE OF ZINC-OXIDE [J].
BYLANDER, EG .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (03) :1188-1195
[2]   DEGRADATION MECHANISM OF NON-OHMIC ZINC-OXIDE CERAMICS [J].
EDA, K ;
IGA, A ;
MATSUOKA, M .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2678-2684
[3]  
Einzinger R., 1982, Grain Boundaries in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P343
[4]   PHOTOLUMINESCENCE FROM ELECTRON-IRRADIATED ZNO [J].
GARCIA, JA ;
REMON, A .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 42 (04) :297-299
[5]   ELECTRICAL-PROPERTIES OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE COMPOUND SEMICONDUCTORS [J].
GREUTER, F ;
BLATTER, G .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (02) :111-137
[6]   CURRENT INSTABILITY PHENOMENA IN ZNO VARISTORS UNDER A CONTINUOUS AC STRESS [J].
GUPTA, TK ;
CARLSON, WG ;
HOWER, PL .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4104-4111
[7]   MICROSTRUCTURAL ENGINEERING THROUGH DONOR AND ACCEPTOR DOPING IN THE GRAIN AND GRAIN-BOUNDARY OF A POLYCRYSTALLINE SEMICONDUCTING CERAMIC [J].
GUPTA, TK .
JOURNAL OF MATERIALS RESEARCH, 1992, 7 (12) :3280-3295
[8]   BARRIER VOLTAGE AND ITS EFFECT ON STABILITY OF ZNO VARISTOR [J].
GUPTA, TK ;
CARLSON, WG .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) :7401-7409
[9]   IMPROVED STABILITY OF THE ZNO VARISTOR VIA DONOR AND ACCEPTOR DOPING AT THE GRAIN-BOUNDARY [J].
GUPTA, TK ;
MILLER, AC .
JOURNAL OF MATERIALS RESEARCH, 1988, 3 (04) :745-754
[10]   GRAIN-BOUNDARY CHARACTERIZATION OF ZNO VARISTORS BY POSITRON-ANNIHILATION SPECTROSCOPY [J].
GUPTA, TK ;
STRAUB, WD ;
RAMANACHALAM, MS ;
SCHAFFER, JP ;
ROHATGI, A .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (12) :6132-6137