TEMPERATURE BEHAVIOR OF INSULATED GATE TRANSISTOR CHARACTERISTICS

被引：33

作者：

BALIGA, BJ

机构：

[1] GE, Corporate Research &, Development Cent, Schenectady, NY,, USA, GE, Corporate Research & Development Cent, Schenectady, NY, USA

来源：

关键词：

CURRENT DENSITY - INSULATED GATE TRANSISTOR (IGT) - LEAKAGE CURRENT - SWITCHING SPEED - TEMPERATURE BEHAVIOR;

D O I：

10.1016/0038-1101(85)90009-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：289 / 297

页数：9

共 8 条

[1]

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[2]

Baliga B. J., 1983, IEEE IN DAPPL SOC M, P794

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[4]

Chang M. F., 1983, International Electron Devices Meeting 1983. Technical Digest, P83

[5]

Goodman A. M., 1983, International Electron Devices Meeting 1983. Technical Digest, P79

[6] POWER RECTIFIERS AND TRANSISTORS [J].

HALL, RN .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1512-1518

[7]

MATSUZAWA T, 1970, IEEE T ELECTRON DEV, V27, P816

[8] THE COMFET - A NEW HIGH CONDUCTANCE MOS-GATED DEVICE [J].

RUSSELL, JP ;

GOODMAN, AM ;

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NEILSON, JM .