PHOTOEMISSION-STUDY OF THE SURFACE ELECTRONIC-STRUCTURE OF INSB(110)

被引：15

作者：

HOCHST, H ^{[1
]}

HERNANDEZCALDERON, I ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.30.4528

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4528 / 4532

页数：5

共 26 条

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