MONOLITHIC INTEGRATION OF A 5.3 GHZ REGENERATIVE FREQUENCY-DIVIDER USING A STANDARD BIPOLAR TECHNOLOGY

[1] KASPERKOVITZ WD, 1979, PHILIPS TECH REV, V39, P47

[2] MILLER RL, 1939, P IRE, V37, P446

[3] NAKAZATO K, 1985, ISSCC, P214

[4] ONODERA K, 1985, ISSCC, P216

[5] Ranfft R., 1982, Microelectronics Journal, V13, P23, DOI 10.1016/S0026-2692(82)80005-0

[6] REGENERATIVE FREQUENCY-DIVISION WITH A GAAS-FET [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1984, 32 (11) : 1461 - 1468

[7] IMPROVING LARGE-SIGNAL MODELS OF BIPOLAR-TRANSISTORS BY DIVIDING INTRINSIC BASE INTO 2 LATERAL SECTIONS [J]. ELECTRONICS LETTERS, 1977, 13 (02) : 40 - 41

[8] REIN HM, Patent No. 35093277

[9] SUZUKI M, 1985, IEEE ELECTR DEVICE L, V6, P181, DOI 10.1109/EDL.1985.26089

[10] WORNER K, 1984, IEEE T CE, V30, P297

[1] KASPERKOVITZ WD, 1979, PHILIPS TECH REV, V39, P47

[2] MILLER RL, 1939, P IRE, V37, P446

[3] NAKAZATO K, 1985, ISSCC, P214

[4] ONODERA K, 1985, ISSCC, P216

[5] Ranfft R., 1982, Microelectronics Journal, V13, P23, DOI 10.1016/S0026-2692(82)80005-0

[6] REGENERATIVE FREQUENCY-DIVISION WITH A GAAS-FET [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1984, 32 (11) : 1461 - 1468

[7] IMPROVING LARGE-SIGNAL MODELS OF BIPOLAR-TRANSISTORS BY DIVIDING INTRINSIC BASE INTO 2 LATERAL SECTIONS [J]. ELECTRONICS LETTERS, 1977, 13 (02) : 40 - 41

[8] REIN HM, Patent No. 35093277

[9] SUZUKI M, 1985, IEEE ELECTR DEVICE L, V6, P181, DOI 10.1109/EDL.1985.26089

[10] WORNER K, 1984, IEEE T CE, V30, P297