REFLECTIVITY OF HGSE + HGTE FROM 4 TO 12 EV AT 12 + 300 DEGREES K

被引：29

作者：

SCOULER, WJ

WRIGHT, GB

机构：

来源：

PHYSICAL REVIEW A-GENERAL PHYSICS | 1964年 / 133卷 / 3A期

关键词：

D O I：

10.1103/PhysRev.133.A736

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：A736 / &

共 29 条

[1] SOME ELECTRICAL AND OPTICAL PROPERTIES OF ZNSE [J].

AVEN, M ;

MARPLE, DTF ;

SEGALL, B .

JOURNAL OF APPLIED PHYSICS, 1961, 32 :2261-&

[2] VALENCE BAND STRUCTURE OF III-V COMPOUNDS [J].

BRAUNSTEIN, R ;

KANE, EO .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (OCT) :1423-&

[3] CRITICAL POINTS AND ULTRAVIOLET REFLECTIVITY OF SEMICONDUCTORS [J].

BRUST, D ;

BASSANI, F ;

PHILLIPS, JL .

PHYSICAL REVIEW LETTERS, 1962, 9 (03) :94-&

[4]

BURSTEIN E, 1955, ADVANCES ELECTRONICS, V7, P155

[5] REFLECTIVITY OF SEMICONDUCTORS WITH WURTZITE STRUCTURE [J].

CARDONA, M .

PHYSICAL REVIEW, 1963, 129 (03) :1068-+

[6] FUNDAMENTAL REFLECTIVITY SPECTRUM OF SEMICONDUCTORS WITH ZINC-BLENDE STRUCTURE [J].

CARDONA, M .

JOURNAL OF APPLIED PHYSICS, 1961, 32 :2151-&

[7] ABSORPTION SPECTRUM OF GERMANIUM AND ZINC-BLENDE-TYPE MATERIALS AT ENERGIES HIGHER THAN FUNDAMENTAL ABSORPTION EDGE [J].

CARDONA, M ;

HARBEKE, G .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (04) :813-&

[8] FUNDAMENTAL REFLECTIVITY AND BAND STRUCTURE OFZNTE,CDTE, AND HGTE [J].

CARDONA, M ;

GREENAWAY, DL .

PHYSICAL REVIEW, 1963, 131 (01) :98-+

[9] REFLECTIVITY OF GRAY TIN SINGLE CRYSTALS IN FUNDAMENTAL ABSORPTION REGION [J].

CARDONA, M ;

GREENAWAY, D .

PHYSICAL REVIEW, 1962, 125 (04) :1291-&

[10] INTERBAND TRANSITIONS IN GROUPS 4, 3-5, AND 2-6 SEMICONDUCTORS [J].

EHRENREICH, H ;

PHILLIPS, JC ;

PHILIPP, HR .

PHYSICAL REVIEW LETTERS, 1962, 8 (02) :59-&

← 1 2 3 →