INGAAS PIN PHOTODIODES GROWN ON GAAS SUBSTRATES BY METAL ORGANIC VAPOR-PHASE EPITAXY

被引:16
作者
DENTAI, AG
CAMPBELL, JC
JOYNER, CH
QUA, GJ
机构
[1] AT&T Bell Lab, Holmdel, NJ, USA, AT&T Bell Lab, Holmdel, NJ, USA
关键词
INTEGRATED OPTICS - SEMICONDUCTING GALLIUM ARSENIDE - Substrates - SEMICONDUCTING INDIUM COMPOUNDS - Applications;
D O I
10.1049/el:19870028
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have fabricated and characterised high-efficiency, long-wavelength PIN photodiodes on In//0//. //5//3Ga//0//. //4//7As/InP/GaAs wafers grown by metal organic vapour phase epitaxy. Initial measurements indicate that good quality devices can be made in this highly stressed material system (lattice mismatch approximately 3. 8%). These results suggest the possibility of fabricating optoelectronic integrated circuits (OEICs) by combining InGaAs(P) electro-optic devices with high-speed GaAs electronics.
引用
收藏
页码:38 / 39
页数:2
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