COMPENSATION AND DIFFUSION MECHANISMS OF CARBON DOPANTS IN GAAS

被引：58

作者：

CHEONG, BH

CHANG, KJ

机构：

[1] Department of Physics, Korea Advanced Institute of Science and Technology, Yusung-ku, Daejon

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.49.17436

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We perform first-principles theoretical studies for the doping efficiency and the diffusion mechanism of carbon dopants in GaAs. The C acceptor occupying an As site is found to be the most stable and is responsible for the high doping efficiency; however, the hole concentration is saturated to about 10(20) cm-3 due to the compensation by the donors such as the [100]-split interstitial (CC)[100] complexes. We propose a mechanism for C diffusion accompanied with the formation and dissociation of the (CC)[100] complex, with the activation energy lower than that for atomistic diffusion.

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页码：17436 / 17439

页数：4

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