PULSED HIGH-RATE PLASMA-ETCHING WITH VARIABLE SI/SIO2 SELECTIVITY AND VARIABLE SI ETCH PROFILES

被引：109

作者：

BOSWELL, RW ^{[1
]}

HENRY, D ^{[1
]}

机构：

[1] AUSTRALIAN NATL UNIV,RES SCH PHYS SCI,PLASMA RES LAB,CANBERRA,ACT 2600,AUSTRALIA

来源：

关键词：

D O I：

10.1063/1.96340

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1095 / 1097

页数：3

共 5 条

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[2] BOSWELL RW, 1984, PLASMA PHYS CONTR F, V26, P1147, DOI 10.1088/0741-3335/26/10/001
[3] HETEROGENEOUS FLUORINE ATOM RECOMBINATION-REACTION ON SEVERAL MATERIALS OF CONSTRUCTION
NORDINE, PC
LEGRANGE, JD
[J]. AIAA JOURNAL, 1976, 14 (05) : 644 - 647
[4] POULSEN RG, 1976, P INT ELECTRON DEVIC, P205
[5] SURFACE PROCESSES IN PLASMA-ASSISTED ETCHING ENVIRONMENTS
WINTERS, HF
COBURN, JW
CHUANG, TJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 469 - 480