INSITU GROWTH OF EPITAXIAL YALO3 THIN-FILMS BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION

被引：24

作者：

HAN, B

NEUMAYER, DA

SCHULZ, DL

HINDS, BJ

MARKS, TJ

ZHANG, H

DRAVID, VP

机构：

[1] NORTHWESTERN UNIV,MAT RES CTR,DEPT CHEM,EVANSTON,IL 60208

[2] NORTHWESTERN UNIV,DEPT MAT SCI & ENGN,EVANSTON,IL 60208

[3] NORTHWESTERN UNIV,SCI & TECHNOL CTR SUPERCONDUCT,EVANSTON,IL 60208

来源：

CHEMISTRY OF MATERIALS | 1993年 / 5卷 / 01期

关键词：

D O I：

10.1021/cm00025a006

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Phase-pure, epitaxial thin films of the YBa2Cu3O7-delta lattice-matched and low dielectric loss perovskite insulator YAlO3 are grown in situ on single-crystal (110) LaAlO3 substrates by metal-organic chemical vapor deposition (MOCVD). Films are grown at 800-degrees-C using the volatile metal-organic beta-diketonate precursors Y(dpm)3 (dpm = dipivaloylmethanate) and Al(acac)3 (acac = acetylacetonate). X-rav diffraction indicates the films grow epitaxially with a high degree of orientation parallel to the substrate surface.

引用

页码：14 / 16

页数：3

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