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SINGLE-CRYSTAL GROWTH OF CU-III-VI2 SEMICONDUCTORS BY THM

被引：26
作者：
MIYAKE, H
SUGIYAMA, K
机构：
[1] Department of Electrical and Electronic Engineering, Mie University, Tsu
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷
关键词：
TRAVELING HEATER METHOD; THM; SOLUTION GROWTH; CHALCOPYRITE SEMICONDUCTOR; CUGAS(2); CUGASE(2); CUINS(2); CUINSE(2); CUGA(0.6)IN(0.4)S(2);
D O I：
10.7567/JJAPS.32S3.156
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The traveling heater method (THM) has been applied to the single crystal growth Of CU-III-VI2 chalcopyrite semiconductors. Up to this time, bulk single crystals of CuGaS2, CUGaSe2, CuInS2 and CuInSe2 ternary compounds have been obtained by the THM technique using In solvent. The THM growth of bulk single crystals of CuGa0.6In0.4S2 quaternary alloy, which is lattice-matched to ZnS, has been investigated. By the use of In-solution zones containing 60 mol% CuGa0.37In0.63S2 SolUte, single crystals with a uniform composition of CuGa0.6In0.4S2 were obtained.
引用
收藏
页码：156 / 160
页数：5
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