THALLIUM INCORPORATION IN MOLECULAR-BEAM-EPITAXIAL INSB

被引:8
作者
WOOD, CEC [1 ]
NOREIKA, A [1 ]
FRANCOMBE, M [1 ]
机构
[1] WESTINGHOUSE ELECT CORP,PITTSBURGH,PA 15235
关键词
D O I
10.1063/1.336793
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3610 / 3612
页数:3
相关论文
共 13 条
[1]   IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J].
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1733-1735
[2]   VAPORIZATION OF HG1-XCDXTE CRYSTALS - CASE OF GROSS INCONGRUENCY [J].
FARROW, RFC ;
JONES, GR ;
WILLIAMS, GM ;
SULLIVAN, PW ;
BOYLE, WJO ;
WOTHERSPOON, JTM .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1979, 12 (10) :L117-&
[3]  
KANAI Y, 1962, JPN J APPL PHYS, V1, P239
[4]  
KRUSE PW, 1981, SEMICONDUCTORS SEMI, V18
[5]   INDIUM ANTIMONIDE-BISMUTH COMPOSITIONS GROWN BY MOLECULAR-BEAM EPITAXY [J].
NOREIKA, AJ ;
TAKEI, WJ ;
FRANCOMBE, MH ;
WOOD, CEC .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :4932-4937
[6]   GROWTH OF SB AND INSB BY MOLECULAR-BEAM EPITAXY [J].
NOREIKA, AJ ;
FRANCOMBE, MH ;
WOOD, CEC .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) :7416-7420
[7]   INSB1-XBIX FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].
OE, K ;
ANDO, S ;
SUGIYAMA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) :L303-L306
[8]   INSITU CHARACTERIZATION OF MBE GROWN GAAS AND ALXGA1-XAS FILMS USING RHEED, SIMS, AND AES TECHNIQUES [J].
PLOOG, K ;
FISCHER, A .
APPLIED PHYSICS, 1977, 13 (02) :111-121
[9]   HIGH-PERFORMANCE, HIGH-DENSITY, PLANAR PBSNTE DETECTOR ARRAYS [J].
WANG, CC ;
LORENZO, JS .
INFRARED PHYSICS, 1977, 17 (01) :83-88
[10]   IMPROVED MOLECULAR-BEAM EPITAXIAL GAAS POWER FETS [J].
WOOD, CEC ;
DESIMONE, D ;
JUDAPRAWIRA, S .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2074-2078