NEW DONORS IN SILICON - AN INTERFACE EFFECT DUE TO INTERNAL OXIDATION

被引：11

作者：

HENRY, A

PAUTRAT, JL

SAMINADAYAR, K

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 09期

关键词：

D O I：

10.1063/1.337735

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3192 / 3195

页数：4

共 17 条

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