UNIFYING EXPLANATION FOR RECENT TEMPERATURE SENSITIVITY MEASUREMENTS OF AUGER RECOMBINATION EFFECTS IN STRAINED INGAAS/INGAASP QUANTUM-WELL LASERS

Recent temperature sensitivity measurements of Auger recombination effects in compressively strained quantum-well structures, which are seemingly inconsistent, are explained in terms of calculation results from a Monte Carlo analysis. In this analysis, realistic valence subband structures obtained using a 4 X 4 k . p method and Fermi-Dirac statistics are employed, where the conduction-hole-hole-splitoff process is also assumed to be the dominant recombination process. It is found that at low carrier density levels and high temperature-often the conditions under which the Auger recombination coefficient is measured-the temperature sensitivity of the Auger recombination coefficient is expected to be low. A qualitative description of this behavior is also given.