THERMOELECTRIC-POWER OF BI2-XPBXCA2SR2CU3O10 BASED ON THE 2-BAND MODEL

被引：37

作者：

AWANA, VPS

MOORTHY, VN

NARLIKAR, AV

机构：

[1] National Physical Laboratory, New Delhi 110012, Dr. K. S. Krishnan Road

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.49.6385

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A two-band model has been applied to explain the observed behavior of the thermoelectric power of Bi-2:2:2:3. The model invokes the Cu-0 planes, which contribute to the metallic conduction of holes, while Bi-O planes contribute to the semiconductorlike behavior of electrons. The results indicate a good fit to the observed data and are consistent with the recently reported scanning-tunneling-spectroscopy studies of Bi-O layers in Bi cuprates.

引用

页码：6385 / 6387

页数：3

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