HIGH-RESOLUTION LIFETIME STUDY OF POSITRON TRAPPING BY VACANCIES IN LEAD

被引：34

作者：

SHARMA, SC

BERKO, S

WARBURTON, WK

机构：

[1] BRANDEIS UNIV,DEPT PHYS,WALTHAM,MA 02154

[2] HARVARD UNIV,DIV ENGN & APPL PHYS,CAMBRIDGE,MA 02138

来源：

PHYSICS LETTERS A | 1976年 / 58卷 / 06期

关键词：

D O I：

10.1016/0375-9601(76)90679-4

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：405 / 408

页数：4

共 12 条

[1]

BERKO S, 1974, B AM PHYS SOC, V19, P283

[2] POSITRON STATES IN IONIC MEDIA [J].

BERTOLACCINI, M ;

BISI, A ;

GAMBARINI, G ;

ZAPPA, L .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (06) :734-+

[3] INVESTIGATION OF POSITRON TRAPPING IN INDIUM [J].

CRISP, VHC ;

LOCK, DG ;

WEST, RN .

JOURNAL OF PHYSICS F-METAL PHYSICS, 1974, 4 (06) :830-838

[4] APPLICATIONS OF POSITRON-LIFETIME MEASUREMENTS TO STUDY OF DEFECTS IN METALS [J].

HALL, TM ;

GOLAND, AN ;

SNEAD, CL .

PHYSICAL REVIEW B, 1974, 10 (08) :3062-3074

[5]

KIERKEGAARD P, 1972, COMPUTER COMMUN, V3, P240

[6] POSITRON - VACANCY INTERACTION IN ALUMINUM [J].

MCKEE, BTA ;

MACKENZIE, IK ;

JOST, AGD .

CANADIAN JOURNAL OF PHYSICS, 1972, 50 (05) :415-+

[7] INVESTIGATION OF POINT-DEFECTS IN EQUILIBRIUM CONCENTRATIONS WITH PARTICULAR REFERENCE TO POSITRON-ANNIHILATION TECHNIQUES [J].

SEEGER, A .

JOURNAL OF PHYSICS F-METAL PHYSICS, 1973, 3 (02) :248-295

[8] TEMPERATURE-DEPENDENCE OF DIFFUSION-COEFFICIENT AND OF TRAPPING RATE OF POSITRONS IN METALS [J].

SEEGER, A .

APPLIED PHYSICS, 1975, 7 (04) :257-263

[9] SELF-TRAPPING OF POSITIVELY CHARGED-PARTICLES IN METALS [J].

SEEGER, A .

APPLIED PHYSICS, 1975, 7 (02) :85-92

[10]

SHULMAN MA, 1976, THESIS BRANDEIS U

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