DECORATED DISLOCATIONS AND SUB-SURFACE DEFECTS INDUCED IN GAAS BY IN-DIFFUSION OF ZINC

被引：16

作者：

BLACK, JF

JUNGBLUTH, ED

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1967年 / 114卷 / 2P1期

关键词：

D O I：

10.1149/1.2426535

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：188 / +

页数：1

共 10 条

[1] DISLOCATIONS AND PRECIPITATES IN GAAS INJECTION LASERS [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) :1973-&

[2]

BARTH H, 1958, Z NATURFORSCH PT A, V13, P792

[3]

BLACK J, 1966, J ELECTROCHEM SOC, V113, pC163

[4] PRECIPITATES INDUCED IN GAAS BY IN-DIFFUSION OF ZINC [J].

BLACK, JF ;

JUNGBLUTH, ED .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) :181-+

[5] COPPER PRECIPITATION ON DISLOCATIONS IN SILICON [J].

DASH, WC .

JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) :1193-1195

[6] PRECIPITATION BEHAVIOUR OF COPPER IN SILICON SINGLE CRYSTALS [J].

FIERMANS, L ;

VENNIK, J .

PHYSICA STATUS SOLIDI, 1965, 12 (01) :277-&

[7] DER RONTGENOGRAPHISCHE NACHWEIS VON VERSETZUNGEN IN GERMANIUM [J].

GEROLD, V ;

MEIER, F .

ZEITSCHRIFT FUR PHYSIK, 1959, 155 (04) :387-394

[8] STRUCTURAL DEFECTS IN GAP CRYSTALS + THEIR ELECTRICAL + OPTICAL EFFECTS [J].

GERSHENZON, M ;

MIKULYAK, RM .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (07) :2132-&

[9] DISLOCATION CONTRAST IN ANOMALOUS TRANSMISSION X-RAY TOPOGRAPHS OF SI (INTERPRETATION OF CONTRAST EMPHASIZED DISPERSION E) [J].

JUNGBLUTH, ED .

APPLIED PHYSICS LETTERS, 1965, 7 (11) :302-+

[10] X-RAY ANALYSIS OF DIFFUSION-INDUCED DEFECTS IN GALLIUM ARSENIDE [J].

SCHWUTTKE, GH ;

RUPPRECHT, H .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) :167-+

← 1 →