EBIC CHARACTERIZATION OF ELECTRICALLY ACTIVE DEFECTS IN (HG,CD)TE

被引：26

作者：

MOORE, TM

SCHAAKE, HF

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.572252

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1666 / 1668

页数：3

共 12 条

[1]

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[2]

BOOKER GR, 1981, I PHYS C SER, V60, P203

[3] DETERMINATION OF SLIP PLANES IN CDXHG(1-X)TE BY ETCHING OF DISLOCATIONS INTRODUCED BY MICROHARDNESS INDENTATIONS [J].

BROWN, M ;

WILLOUGHBY, AFW .

JOURNAL DE PHYSIQUE, 1979, 40 :151-155

[4]

GOLDSTEIN JI, 1976, PRACTICAL SCANNING E, P54

[5] EBIC CHARACTERIZATION OF HGCDTE CRYSTALS AND PHOTO-DIODES [J].

LANIR, M ;

VANDERWYCK, AHB ;

WANG, CC .

JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (02) :175-189

[6]

LEAMY HJ, 1978, SCANNING ELECTRON MI, V1, P717

[7]

PARKER SG, 1969, Patent No. 3468363

[8]

PAUTRAT JL, 1982, J APPL PHYS, V53, P8688

[9] LATTICE-DEFECTS IN (HG,CD)TE - INVESTIGATIONS OF THEIR NATURE AND EVOLUTION [J].

SCHAAKE, HF ;

TREGILGAS, JH ;

LEWIS, AJ ;

EVERETT, PM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1625-1630

[10]

SCHAAKE HF, 1983, DEFECTS SEMICONDUCTO

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