共 1 条
PZT THIN-FILM PREPARATION ON PT-TI ELECTRODE BY RF-SPUTTERING
被引：76
作者：
ABE, K
TOMITA, H
TOYODA, H
IMAI, M
YOKOTE, Y
机构：
[1] Metals and Ceramics Laboratory, Toshiba R & D Center, Toshiba Corporation, Saiwai-ku Kawasaki, 210, Komukai-Toshiba-cho
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
|
1991年
/
30卷
/
9B期
关键词：
PZT;
FERROELECTRIC THIN FILM;
PT-TI ALLOY;
LOWER ELECTRODE FILM;
D O I：
10.1143/JJAP.30.2152
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Pt-Ti alloy film were studied for use as a lower electrode of the ferroelectric lead zirconate titanate (PZT) thin film capacitor. Pt-Ti alloy films with different Ti/Pt atomic ratios were first prepared by rf sputtering. Subsequently, PZT thin films were deposited also by rf magnetron sputtering on the Pt-Ti alloy metals. The Ti/Pt ratio in the alloy was found to strongly affect the crystal structure formation and the composition of the PZT thin films. The Ti/Pt ratio range from 0.02 to 0.17 was shown to bring about a preferable perovskite-type structure and a reproducible constant composition. The effect of Ti atoms in the Pt-Ti lower electrode was discussed in connection with the Pb atom evaporation rate.
引用
收藏
页码：2152 / 2154
页数：3
相关论文