OPTICAL BAND-GAP OF ZN3N2 FILMS

被引：98

作者：

KURIYAMA, K ^{[1
]}

TAKAHASHI, Y ^{[1
]}

SUNOHARA, F ^{[1
]}

机构：

[1] HOSEI UNIV,ION BEAM TECHNOL RES CTR,KOGANEI,TOKYO 184,JAPAN

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.48.2781

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The results of measurements of the optical band gap of Zn3N2 films, which crystallize in cubic antibixbyite structure (space group: Ia3), are presented. The polycrystalline films are prepared by direct reaction between NH3 and zinc films on quartz substrates kept at 410-degrees-C. Analysis of the thin-film data at higher values of the absorption coefficient is inconclusive with respect to the band-gap nature of the edge. Nevertheless, indirect evidence suggests that the optical gap is probably direct and lies in the neighborhood of 3.2 eV. This value is larger than those of other tetragonal II-V compounds: Zn3P2 (E(g) = 1.51 eV) and Zn3As2 (E(g) = 0.93 eV). The origin of the large band gap of Zn3N2 is discussed.

引用

页码：2781 / 2782

页数：2

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