TRIETHYLLEAD TERT-BUTOXIDE, A NEW PRECURSOR FOR ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION OF LEAD ZIRCONATE TITANATE THIN-FILMS

被引：17

作者：

DORMANS, GJM ^{[1
]}

DEKEIJSER, M ^{[1
]}

VANVELDHOVEN, PJ ^{[1
]}

FRIGO, DM ^{[1
]}

HOLEWIJN, JE ^{[1
]}

VANMIER, GPM ^{[1
]}

SMIT, CJ ^{[1
]}

机构：

[1] BILLITON RES BV,6800 AA ARNHEM,NETHERLANDS

来源：

CHEMISTRY OF MATERIALS | 1993年 / 5卷 / 04期

关键词：

D O I：

10.1021/cm00028a009

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The deposition of lead zirconate titanate (PbZrxTi1-xO3) thin films by organometallic chemical vapor deposition (OMCVD) is reported using the new precursor triethyllead tert-butoxide (TELBUT) together with titanium tetra-tert-butoxide (TTB) and zirconium tetra-tert-butoxide (ZTB). TELBUT and the analogous compound triethyllead isopropoxide were synthesized and were found to be thermally stable at room temperature but decomposed when exposed to daylight; for TELBUT the photolysis products are different for the pure compound and solutions in toluene-d8. TELBUT started to decompose exothermically around 138-degrees-C in a differential scanning calorimeter, giving metallic lead. OMCVD experiments showed that, in the absence of additional oxygen, TELBUT gave metallic lead. Lead titanate (PbTiO3) could be formed at temperatures between 550 and 700-degrees-C in the presence of oxygen and titanium tetraisopropoxide. Without oxygen, only lead and titanium dioxide were formed. PbZrxTi1-xO3 thin films were deposited using TTB, ZTB, and TELBUT in the presence of oxygen at 700-degrees-C. Ferroelectric films with good crystallinity and high values for the polarization were obtained with this new precursor system.

引用

页码：448 / 451

页数：4

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