HIGH-FIELD CAPTURE OF ELECTRONS BY COULOMB-ATTRACTIVE CENTERS IN SILICON DIOXIDE

被引：164

作者：

NING, TH ^{[1
]}

机构：

[1] IBM CORP THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 07期

关键词：

D O I：

10.1063/1.323116

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3203 / 3208

页数：6

共 39 条

[1] RECOMBINATION OF ELECTRONS AND DONORS IN N-TYPE GERMANIUM [J].

ASCARELLI, G ;

BROWN, SC .

PHYSICAL REVIEW, 1960, 120 (05) :1615-1626

[2] RECOMBINATION OF ELECTRONS AND DONORS IN N-TYPE GERMANIUM [J].

ASCARELLI, G ;

RODRIGUEZ, S .

PHYSICAL REVIEW, 1961, 124 (05) :1321-&

[3] REMARKS ON RECOMBINATION OF ELECTRONS AND DONORS IN N-TYPE GERMANIUM [J].

BELEZNAY, F ;

PATAKI, G .

PHYSICA STATUS SOLIDI, 1966, 13 (02) :499-&

[4] RECOMBINATION IN SEMICONDUCTORS [J].

BEMSKI, G .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :990-1004

[5] RADIATIVE CAPTURE BY IMPURITIES IN SEMICONDUCTORS [J].

BLAKEMORE, JS .

PHYSICAL REVIEW, 1967, 163 (03) :809-+

[6]

BONCH-BRUEVICH VL, 1965, FIZ TVERD TELA+, V6, P1615

[7] RECOMBINATION MECHANISMS [J].

BONCH-BRUEVICH, VL ;

LANDSBERG, EG .

PHYSICA STATUS SOLIDI, 1968, 29 (01) :9-+

[8]

CHEBAN AG, 1966, FIZ TVERD TELA+, V7, P2213

[9]

CHEBAN AG, 1965, FIZ TVERD TELA+, V7, P1054

[10]

CONWELL EM, 1967, SOLID STATE PHYSICS, V9

← 1 2 3 4 →