TUNNELING IN SEMICONDUCTOR HETEROSTRUCTURES STUDIED BY SUBPICOSECOND 4-WAVE MIXING

被引：26

作者：

LEO, K ^{[1
]}

SHAH, J ^{[1
]}

GOBEL, EO ^{[1
]}

DAMEN, TC ^{[1
]}

KOHLER, K ^{[1
]}

GANSER, P ^{[1
]}

机构：

[1] FRAUNHOFER IAF,W-7800 FREIBURG,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 20期

关键词：

D O I：

10.1063/1.103008

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We apply time-resolved four-wave mixing as a novel tool to study resonant tunneling of carriers in semiconductor heterostructures. The polarization decay of excitons in a quantum well is much faster when the alignment of the electron levels in adjacent wells leads to resonant tunneling and subsequent scattering of the carriers.

引用

收藏

页码：2031 / 2033

页数：3

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